Silicon carbide material has very high hardness, Damo's 9.2-9.6. First, we introduce 0.15mm electroplated diamond wire with high-speed cutting equipment (linear speed up to 1500 m/min), which can effectively reduce the damage layer on the surface of silicon carbide substrate, increase the yield of silicon carbide, improve the utilization rate of crystal, reduce costs, and ensure the bending BOW, warpage WARP and other indicators of large-sized silicon carbide cutting pieces.